| PART |
Description |
Maker |
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
| MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGRB2025CT MGRB2025CT_D ON1884 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| MGV125-21-P55 MGV075-15-P55 MGV100-24-P55 MGV075-1 |
KA BAND, 0.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.33 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.43 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.48 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.58 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE CERAMIC PACKAGE-2
|
NIC Components, Corp.
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
| 3SK0183 |
Gallium Arsenide Devices
|
Panasonic
|
| OH10011 |
Gallium Arsenide Devices
|
Panasonic
|
|
